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Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2013

L -valley electron spin dynamics in GaAs

Abstract

Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region, yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. Combining these high energy photoexcitation experiments with time-resolved photoluminescence spectroscopy of Γ-valley spin-polarized photogenerated electrons allows us to deduce a typical L-valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.
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Dates and versions

hal-02050738 , version 1 (27-02-2019)

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  • HAL Id : hal-02050738 , version 1

Cite

Tiantian Zhang, Philippe Barate, T. Nguyen, Andrea Balocchi, Thierry Amand, et al.. L -valley electron spin dynamics in GaAs. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 87 (4). ⟨hal-02050738⟩
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