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L -valley electron spin dynamics in GaAs

Abstract : Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region, yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. Combining these high energy photoexcitation experiments with time-resolved photoluminescence spectroscopy of Γ-valley spin-polarized photogenerated electrons allows us to deduce a typical L-valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations.
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Contributor : Insa Toulouse Scd <>
Submitted on : Wednesday, February 27, 2019 - 12:44:46 PM
Last modification on : Friday, April 24, 2020 - 10:28:08 AM


  • HAL Id : hal-02050738, version 1


T. Zhang, P. Barate, T. Nguyen, Andrea Balocchi, Thierry Amand, et al.. L -valley electron spin dynamics in GaAs. Physical Review B: Condensed Matter and Materials Physics, American Physical Society, 2013, 87 (4). ⟨hal-02050738⟩



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