Spin-coherent dynamics and carrier lifetime in strained Ge 1 − x Sn x semiconductors on silicon - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2019

Spin-coherent dynamics and carrier lifetime in strained Ge 1 − x Sn x semiconductors on silicon

Abstract

We demonstrate an effective epitaxial route for the manipulation and further enrichment of the intriguing spin-dependent phenomena boasted by germanium. We show optical initialization and readout of spins in Ge-rich germanium-tin alloys and report on spin quantum beats between Zeeman-split levels under an external magnetic field. While heavy Sn atoms can be readily utilized to strengthen the spin-orbit coupling, our experiments reveal robust spin orientation in a wide temperature range and a persistent spin lifetime that noticeably approaches the nanosecond regime at room temperature. In addition, time decay photoluminescence experiments evidence a temperature-induced monotonic decrease of the carrier lifetime, eventually providing crucial insights also into nonradiative recombination mechanisms.
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hal-02057690 , version 1 (16-05-2019)

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S. de Cesari, Andrea Balocchi, E. Vitiello, P. Jahandar, E. Grilli, et al.. Spin-coherent dynamics and carrier lifetime in strained Ge 1 − x Sn x semiconductors on silicon. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2019, 99 (3), ⟨10.1103/PhysRevB.99.035202⟩. ⟨hal-02057690⟩
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