Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Physical Review Letters Year : 2017

Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers

Abstract

Using time-resolved Kerr rotation, we measure the spin-valley dynamics of resident electrons and holes in single charge-tunable monolayers of the archetypal transition-metal dichalcogenide (TMD) semiconductor WSe2. In the n-type regime, we observe long (∼130  ns) polarization relaxation of electrons that is sensitive to in-plane magnetic fields By, indicating spin relaxation. In marked contrast, extraordinarily long (∼2  μs) polarization relaxation of holes is revealed in the p-type regime, which is unaffected by By, directly confirming long-standing expectations of strong spin-valley locking of holes in the valence band of monolayer TMDs. Supported by continuous-wave Kerr spectroscopy and Hanle measurements, these studies provide a unified picture of carrier polarization dynamics in monolayer TMDs, which can guide design principles for future valleytronic devices.
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Dates and versions

hal-02054066 , version 1 (01-03-2019)

Identifiers

  • HAL Id : hal-02054066 , version 1

Cite

P. Dey, Luyi Yang, Cédric Robert, Gang Wang, B. Urbaszek, et al.. Gate-Controlled Spin-Valley Locking of Resident Carriers in WSe 2 Monolayers. Physical Review Letters, 2017, 119 (13). ⟨hal-02054066⟩
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