Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Advanced Materials Year : 2017

Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy

Abstract

A new member of the layered pseudo‐1D material family—monoclinic gallium telluride (GaTe)—is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.
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Dates and versions

hal-02053986 , version 1 (01-03-2019)

Identifiers

  • HAL Id : hal-02053986 , version 1

Cite

Hui Cai, Bin Chen, Gang Wang, Emmanuel Soignard, Afsaneh Khosravi, et al.. Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy. Advanced Materials, 2017, 29 (8), pp.1605551. ⟨hal-02053986⟩
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