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Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells

Abstract : The electrical control of the conduction band electron spin relaxation time is demonstrated in (111)-oriented GaAs quantum wells embedded in a diode structure for all the three spatial directions. By applying an external bias a large increase or decrease of the electron spin relaxation time can be achieved due to the compensation of the Dresselhaus spinsplitting by the Rashba one. A similar effect is demonstrated in (111) piezoelectric sturctures without the need of any external bias.
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Contributor : Insa Toulouse Scd <>
Submitted on : Thursday, February 28, 2019 - 4:54:31 PM
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  • HAL Id : hal-02052796, version 1


Andrea Balocchi, Sawsen Azaizia, Hélène Carrère, Thierry Amand, Alexandre Arnoult, et al.. Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2. ⟨hal-02052796⟩



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