Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Conference Papers Year : 2016

Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells

Abstract

The electrical control of the conduction band electron spin relaxation time is demonstrated in (111)-oriented GaAs quantum wells embedded in a diode structure for all the three spatial directions. By applying an external bias a large increase or decrease of the electron spin relaxation time can be achieved due to the compensation of the Dresselhaus spinsplitting by the Rashba one. A similar effect is demonstrated in (111) piezoelectric sturctures without the need of any external bias.
No file

Dates and versions

hal-02052796 , version 1 (28-02-2019)

Identifiers

  • HAL Id : hal-02052796 , version 1

Cite

Andrea Balocchi, Sawsen Azaizia, Hélène Carrère, Thierry Amand, Alexandre Arnoult, et al.. Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2. ⟨hal-02052796⟩
72 View
0 Download

Share

Gmail Mastodon Facebook X LinkedIn More