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Journal Articles Applied Physics Letters Year : 2014

Charge tuning in [111] grown GaAs droplet quantum dots


We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from −3|e| to +2|e|. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T = 4 K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25 meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions, a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
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Dates and versions

hal-02050886 , version 1 (27-02-2019)


  • HAL Id : hal-02050886 , version 1


Louis Bouet, M. Vidal, T. Mano, N. N. Ha, T. Kuroda, et al.. Charge tuning in [111] grown GaAs droplet quantum dots. Applied Physics Letters, 2014, 105 (8), pp.082111. ⟨hal-02050886⟩
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