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Conference Papers Year : 2014

Optical orientation of electron spins in GaAs L-valleys

Abstract

We report on optical orientation experiments in GaAs epilayers with excitation energies in the 3 eV region, leading the photo-generation of spin-polarized electrons in the satellite L valley. From both continuous-wave and time resolved measurements we show that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. A typical L-valley electron spin relaxation time of 200 fs is deduced, in agreement with theoretical calculations.
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Dates and versions

hal-02050752 , version 1 (27-02-2019)

Identifiers

  • HAL Id : hal-02050752 , version 1

Cite

Andrea Balocchi, Philippe Barate, Tiantian Zhang, Thierry Amand, Pierre Renucci, et al.. Optical orientation of electron spins in GaAs L-valleys. SPIE NanoScience + Engineering, Aug 2014, San Diego, United States. pp.91670A. ⟨hal-02050752⟩
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