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Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

Abstract : AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.
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https://hal.insa-toulouse.fr/hal-02050606
Contributor : Insa Toulouse Scd <>
Submitted on : Wednesday, February 27, 2019 - 11:45:19 AM
Last modification on : Tuesday, May 4, 2021 - 3:41:04 PM

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  • HAL Id : hal-02050606, version 1

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Cédric Robert, Thanh Tra Nguyen, Antoine Létoublon, Mathieu Perrin, C. Cornet, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications. Thin Solid Films, Elsevier, 2013, 541, pp.87-91. ⟨hal-02050606⟩

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