Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Thin Solid Films Year : 2013

Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications

C. Cornet
Jacky Even
Pascal Turban
  • Function : Author
  • PersonId : 896
  • IdHAL : pturban

Abstract

AlGaP alloy and InGaAs/GaP quantum dots are studied toward possible solutions for the cladding layers and the active zone of a pseudomorphic laser structure on silicon. Coherent growth of AlGaP layers on GaP substrate is carefully analysed by X-ray reciprocal space mapping. The influence of Al content on refractive index is studied by spectroscopic ellipsometry. The structural and optical properties of InGaAs/GaP quantum dots are respectively studied by scanning tunnelling microscopy and time-resolved photoluminescence experiments.
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Dates and versions

hal-02050606 , version 1 (27-02-2019)

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  • HAL Id : hal-02050606 , version 1

Cite

Cédric Robert Robert, Thanh Tra Nguyen, Antoine Létoublon, Mathieu Perrin, C. Cornet, et al.. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications. Thin Solid Films, 2013, 541, pp.87-91. ⟨hal-02050606⟩
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