Electron spin dynamics and g-factor in GaAsBi - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Applied Physics Letters Year : 2013

Electron spin dynamics and g-factor in GaAsBi

Abstract

Electron spin dynamics in elastically strained bulk GaAsBi epilayer with 2.2% Bi concentration has been measured by time resolved photoluminescence spectroscopy. Under external transverse magnetic field, the measurement of the photoluminescence polarization oscillations resulting from the Larmor precession of electron spins yields an accurate determination of the Landé g-factor. We find that the value of g increases from −0.81 to −0.68 when the temperature rises from T = 100 K to T = 300 K. This is typically double the value of GaAs, in agreement with the larger spin-orbit interaction in GaAsBi. In this temperature range, the electron spin lifetime decreases from 370 to 100 ps.
No file

Dates and versions

hal-02050545 , version 1 (27-02-2019)

Identifiers

Cite

Simone Mazzucato, Tiantian Zhang, Hélène Carrère, David Lagarde, Poonyasiri Boonpeng, et al.. Electron spin dynamics and g-factor in GaAsBi. Applied Physics Letters, 2013, 102 (25), pp.252107. ⟨10.1063/1.4812660⟩. ⟨hal-02050545⟩
57 View
0 Download

Altmetric

Share

Gmail Mastodon Facebook X LinkedIn More