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Journal Articles Semiconductor Science and Technology Year : 2013

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Abstract

Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi samples. Rapid thermal annealing was carried out at a temperature of 750 °C. With annealing, we observed a significant change in the photoluminescence decay time at low temperature and low excitation power, which is likely due to a reduction of localized states. Although the time-integrated photoluminescence intensity did not show a large variation, this enhancement was confirmed by the observed removal after annealing of the S-shape behaviour present in the as-grown sample.
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Dates and versions

hal-02050522 , version 1 (27-02-2019)

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Simone Mazzucato, Poonyasiri Boonpeng, Hélène Carrère, David Lagarde, Alexandre Arnoult, et al.. Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence. Semiconductor Science and Technology, 2013, 28 (2), pp.022001. ⟨10.1088/0268-1242/28/2/022001⟩. ⟨hal-02050522⟩
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