Skip to Main content Skip to Navigation
Journal articles

Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence

Abstract : Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi samples. Rapid thermal annealing was carried out at a temperature of 750 °C. With annealing, we observed a significant change in the photoluminescence decay time at low temperature and low excitation power, which is likely due to a reduction of localized states. Although the time-integrated photoluminescence intensity did not show a large variation, this enhancement was confirmed by the observed removal after annealing of the S-shape behaviour present in the as-grown sample.
Document type :
Journal articles
Complete list of metadatas

https://hal.insa-toulouse.fr/hal-02050522
Contributor : Insa Toulouse Scd <>
Submitted on : Wednesday, February 27, 2019 - 11:15:51 AM
Last modification on : Tuesday, March 3, 2020 - 11:40:04 AM

Identifiers

Citation

S Mazzucato, Poonyasiri Boonpeng, H. Carrère, D Lagarde, Alexandre Arnoult, et al.. Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence. Semiconductor Science and Technology, IOP Publishing, 2013, 28 (2), pp.022001. ⟨10.1088/0268-1242/28/2/022001⟩. ⟨hal-02050522⟩

Share

Metrics

Record views

82