Reduction of defect density by rapid thermal annealing in GaAsBi studied by time-resolved photoluminescence
Abstract
Time-resolved photoluminescence was performed on as-grown and annealed bulk GaAsBi samples. Rapid thermal annealing was carried out at a temperature of 750 °C. With annealing, we observed a significant change in the photoluminescence decay time at low temperature and low excitation power, which is likely due to a reduction of localized states. Although the time-integrated photoluminescence intensity did not show a large variation, this enhancement was confirmed by the observed removal after annealing of the S-shape behaviour present in the as-grown sample.