Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu 2 SnS 3 - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Physica B: Condensed Matter Year : 2016

Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu 2 SnS 3

Abstract

The dynamic electrical conduction in the bulk ternary semiconductor compound Cu2SnS3 is studied for the first time in the high temperature range from 300 °C to 440 °C in the frequency range 1 kHz–1 MHz. New activation energy for conduction mechanism is obtained and its frequency dependence is analyzed. The Cole–Cole representation is almost half circular indicating a single contribution to total electrical conduction through the material. The activation energy for the mean relaxation process, obtained separately from the analysis of imaginary part Z″ of complex impedance Z* and from the equivalent electric circuit, is estimated to be (942 +74). The correlated barrier hopping model is considered to analyze the experimental data. The results are compared with those obtained previously in low temperature range.
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Dates and versions

hal-02049171 , version 1 (26-02-2019)

Identifiers

  • HAL Id : hal-02049171 , version 1

Cite

S. Lahlali, L. Essaleh, M. Belaqziz, H. Chehouani, K. Djessas, et al.. Analysis of electrical conduction mechanism in the high temperature range of the nanostructured photoabsorber Cu 2 SnS 3. Physica B: Condensed Matter, 2016, 500, pp.161-164. ⟨hal-02049171⟩
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