Synthesis of Oxide-Free InP Quantum Dots: Surface Control and H2-Assisted Growth - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Chemistry of Materials Year : 2017

Synthesis of Oxide-Free InP Quantum Dots: Surface Control and H2-Assisted Growth

Abstract

Control over particle surfaces and interfaces is a principal requirement to fully take advantage of semiconducting Quantum Dot (QDs) properties. In the case of indium phosphide, the sensitivity of the material to water renders it challenging to synthesize oxide-free particles. We demonstrate the ability to achieve complete control over the surface by developing synthetic strategies based on a novel reactive indium precursor, tris(N,N'-diisopropylacetamidinato) indium(III). This complex permits the synthesis of InP QDs at temperatures as low as 150°C with no inherent surface oxidation. At higher temperatures (230°C), the concomitant use of an H 2 atmosphere yields oxide-free InP QDs. The prevention of such an amorphous oxide layer provides a clean surface suitable for subsequent growth. An extensive solid-state 2 H NMR spectroscopy study demonstrates an unprecedented H 2 bond dissociation at the QD surface yielding QDs-H species and in so doing protecting the surface from oxidation.
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Dates and versions

hal-02003988 , version 1 (04-03-2019)

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Edwin A Baquero, Héloïse Virieux, Robert Swain, Angélique Gillet, Arnaud Cros-Gagneux, et al.. Synthesis of Oxide-Free InP Quantum Dots: Surface Control and H2-Assisted Growth. Chemistry of Materials, 2017, 29 (22), pp.9623-9627. ⟨10.1021/acs.chemmater.7b04069⟩. ⟨hal-02003988⟩
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