Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Chemistry of Materials Year : 2018

Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots

Abstract

Indium phosphide colloidal quantum dots (QDs) are emerging as an efficient cadmium-free alternative for optoelectronic applications. Recently, syntheses based on easy-to-implement aminophosphine precursors have been developed. We show by solid-state nuclear magnetic resonance spectroscopy that this new approach allows oxide-free indium phosphide core or core/shell quantum dots to be made. Importantly, the oxide-free core/shell interface does not help in achieving higher luminescence efficiencies. We demonstrate that in the case of InP/ZnS and InP/ZnSe QDs, a more pronounced oxidation concurs with a higher photoluminescence efficiency. This study suggests that a II–VI shell on a III–V core generates an interface prone to defects. The most efficient InP/ZnS or InP/ZnSe QDs are therefore made with an oxide buffer layer between the core and the shell: it passivates these interface defects but also results in a somewhat broader emission line width.

Dates and versions

hal-02002106 , version 1 (31-01-2019)

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Mickaël Tessier, Edwin A Baquero, Dorian Dupont, Valeriia Grigel, Eva Bladt, et al.. Interfacial Oxidation and Photoluminescence of InP-Based Core/Shell Quantum Dots. Chemistry of Materials, 2018, 30 (19), pp.6877-6883. ⟨10.1021/acs.chemmater.8b03117⟩. ⟨hal-02002106⟩
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