Spin-filtering effect in GaAsN: electron-nuclear spin dynamics of Ga3+ centers - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Journal of Materials Science: Materials in Electronics Year : 2018

Spin-filtering effect in GaAsN: electron-nuclear spin dynamics of Ga3+ centers

Abstract

The impact of Ga3+ centers in the spin-filtering effect observed in GaAsN samples is investigated through a model based on the master equation approach. Our results, compared with experimental data, show that, Ga3+ are essential to understanding the behavior of the photoluminescence intensity and degree of circular polarization as functions of a Faraday configuration magnetic field. The model presented here takes into account the interplay of Ga2+ and Ga3+ centers, Zeeman and hyperfine interaction. The various processes that drive the spin-filtering effect, as the spin selective capture of conduction band electrons into Ga centers are also considered here.
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Dates and versions

hal-02057281 , version 1 (05-03-2019)

Identifiers

  • HAL Id : hal-02057281 , version 1

Cite

V. Ibarra-Sierra, J. Sandoval-Santana, Sawsen Azaizia, Hélène Carrère, L. Bakaleinikov, et al.. Spin-filtering effect in GaAsN: electron-nuclear spin dynamics of Ga3+ centers. Journal of Materials Science: Materials in Electronics, 2018, 29 (18), pp.15307-15314. ⟨hal-02057281⟩
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