Exciton diffusion in WSe 2 monolayers embedded in a van der Waals heterostructure - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Applied Physics Letters Year : 2018

Exciton diffusion in WSe 2 monolayers embedded in a van der Waals heterostructure

K. Watanabe
Thierry Amand

Abstract

We have combined spatially resolved steady-state micro-photoluminescence with time-resolved photoluminescence to investigate the exciton diffusion in a WSe2 monolayer encapsulated with hexagonal boron nitride. At 300 K, we extract an exciton diffusion length of LX = 0.36 ± 0.02 μm and an exciton diffusion coefficient of DX = 14.5 ± 2 cm2/s. This represents a nearly 10-fold increase in the effective mobility of excitons with respect to several previously reported values on nonencapsulated samples. At cryogenic temperatures, the high optical quality of these samples has allowed us to discriminate the diffusion of the different exciton species: bright and dark neutral excitons, as well as charged excitons. The longer lifetime of dark neutral excitons yields a larger diffusion length of LXD=1.5±0.02 μm.
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Dates and versions

hal-02057188 , version 1 (05-03-2019)

Identifiers

  • HAL Id : hal-02057188 , version 1

Cite

Fabian Cadiz, Cédric Robert, Emmanuel Courtade, Marco Manca, L. Martinelli, et al.. Exciton diffusion in WSe 2 monolayers embedded in a van der Waals heterostructure. Applied Physics Letters, 2018, 112 (15), pp.152106. ⟨hal-02057188⟩
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