Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector

Abstract : Remanent electrical spin injection into an InGaAs/GaAs based quantum well light emitting diode is realized by using a perpendicularly magnetized MgO/CoFeB/Ta/CoFeB/MgO spin injector. We demonstrate that the Ta interlayer plays an important role to establish the perpendicular magnetic anisotropy and the thickness of Ta interlayer determines the type of exchange coupling between the two adjacent CoFeB layers. They are ferromagnetically or antiferromagnetically coupled for a Ta thickness of 0.5 nm or 0.75 nm, respectively. A circular polarized electroluminescence (Pc) of about 10% is obtained at low temperature and at zero magnetic field. The direction of the electrically injected spins is determined only by the orientation of the magnetization of the bottom CoFeB layer which is adjacent to the MgO/GaAs interface. This work proves the critical role of the bottom CoFeB/MgO interface on the spin-injection and paves the way for the electrical control of spin injection via magnetic tunnel junction-type spin injector.
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https://hal.insa-toulouse.fr/hal-02053668
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Submitted on : Friday, March 1, 2019 - 2:42:23 PM
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B. Tao, P. Barate, J. Frougier, Pierre Renucci, B. Xu, et al.. Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector. Applied Physics Letters, American Institute of Physics, 2016, 108 (15), pp.152404. ⟨10.1063/1.4945768⟩. ⟨hal-02053668⟩

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