Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells - INSA Toulouse - Institut National des Sciences Appliquées de Toulouse Access content directly
Journal Articles Applied Physics Letters Year : 2013

Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells

Abstract

We demonstrate the electrical control of the electron spin relaxation in GaAs/AlGaAs multiple quantum wells grown on (111)A substrate. By embedding the wells in a NIP structure, the application of an external bias yields a large increase of the electron spin relaxation time due to the compensation of the Dresselhaus spin-splitting by the Rashba one. Depending on the direction of the applied electric field, the electron spin relaxation can be slowed-down or sped-up. It can be tuned by a factor 50 at 75 K and still by a factor 2 at 250 K.
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Dates and versions

hal-02050686 , version 1 (27-02-2019)

Identifiers

  • HAL Id : hal-02050686 , version 1

Cite

Gang Wang, Andrea Balocchi, David Lagarde, C. Zhu, Thierry Amand, et al.. Temperature dependent electric field control of the electron spin relaxation in (111)A GaAs quantum wells. Applied Physics Letters, 2013, 102 (24), pp.242408. ⟨hal-02050686⟩
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