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Article Dans Une Revue Applied Physics Letters Année : 2016

Discrete quantum dot like emitters in monolayer MoSe 2 : Spatial mapping, magneto-optics, and charge tuning

Résumé

Transition metal dichalcogenide monolayers such as MoSe2, MoS2, and WSe2 are direct bandgap semiconductors with original optoelectronic and spin-valley properties. Here we report on spectrally sharp, spatially localized emission in monolayer MoSe2. We find this quantum dot-like emission in samples exfoliated onto gold substrates and also suspended flakes. Spatial mapping shows a correlation between the location of emitters and the existence of wrinkles (strained regions) in the flake. We tune the emission properties in magnetic and electric fields applied perpendicular to the monolayer plane. We extract an exciton g-factor of the discrete emitters close to −4, as for 2D excitons in this material. In a charge tunable sample, we record discrete jumps on the meV scale as charges are added to the emitter when changing the applied voltage.
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Dates et versions

hal-01989958 , version 1 (22-01-2019)

Identifiants

  • HAL Id : hal-01989958 , version 1

Citer

Artur Branny, Gang Wang, Santosh Kumar, Cédric Robert, Benjamin Lassagne, et al.. Discrete quantum dot like emitters in monolayer MoSe 2 : Spatial mapping, magneto-optics, and charge tuning. Applied Physics Letters, 2016, 108 (14), pp.142101. ⟨hal-01989958⟩
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